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| PROCESS Schottky Diode CPD92 Central TM High Voltage Schottky Diode Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 9.0 x 9.0 MILS 7.9 MILS 4.8 MILS DIAMETER Al - 30,000A Au - 18,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 139,050 PRINCIPAL DEVICE TYPES CMDD6263 CMKD6263 CMOD6263 CMPD6263 SERIES CMSD6263 SERIES 1N6263 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CPD92 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) |
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